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ILD621GB Dataheets PDF



Part Number ILD621GB
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER
Datasheet ILD621GB DatasheetILD621GB Datasheet (PDF)

ILD621/621GB QUAD CHANNEL ILQ621/621GB DUAL CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 • Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. • High Collector-Emitter Voltage, BVCEO=70 V • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match.

  ILD621GB   ILD621GB



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ILD621/621GB QUAD CHANNEL ILQ621/621GB DUAL CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 • Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. • High Collector-Emitter Voltage, BVCEO=70 V • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Isolation Test Voltage from Double Molded Package, 5300 VACRMS • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Forward Current ...........................................60 mA Surge Current .................................................1.5 A Power Dissipation.......................................100 mW Derate from 25°C ................................1.33 mW/°C Detector Collector-Emitter Reverse Voltage ...................70 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)..........................100 mA Power Dissipation.......................................150 mW Derate from 25°C .................................... –2 mW/°C Package Isolation Test Voltage (t=1 sec.) ......................................... 7500 VACPK (t=1 min.) ....................................... 5300 VACRMS Package Dissipation ILD620/GB............... 400 mW Derate from 25°C ...............................5.33 mW/°C Package Dissipation ILQ620/GB ..............500 mW Derate from 25°C ...............................6.67 mW/°C Creepage ............................................... 7 mm min. Clearance............................................... 7 min min. Isolation Resistance VIO=500 V, TA=25°C ............................... ≥1012 Ω VIO=500 V, TA=100°C ............................. ≥1011 Ω Storage Temperature................... –55°C to +150°C Operating Temperature ................–55°C to +100°C Junction Temperature.................................... 100°C Soldering Temperature (2 mm from case bottom) .......................... 260°C 4° Typ. .022 (.56) .018 (.46) .790 (20.07) .779 (19.77 ) Dimensions in inches (mm) 4 3 2 1 Pin One I.D. .268 (6.81) .255 (6.48) Anode Cathode 5 6 7 8 Cathode Anode 1 2 3 4 8 7 6 5 Emitter Collector Collector Emitter .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) 4° Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .305 typ. (7.75) typ. 10° Typ. 3°–9° .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) .100 (2.54) Typ. Pin One I.D. Anode 1 Cathode 2 Cathode 3 .268 (6.81) .255 (6.48) Anode 4 Anode 5 Cathode 6 Cathode 7 16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 .305 typ. (7.75) typ. Emitter Anode 8 .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 10° Typ. .135 (3.43) .115 (2.92) .100 (2.54) Typ. 3°–9° .012 (.30) .008 (.20) DESCRIPTION The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of 50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present. 5–1 Characteristics Symbol Emitter Forward Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Collector-Emitter Leakage Current Collector-Emitter Leakage Current Thermal Resistance, Junction to Lead Package Transfer Characteristics Channel/Channel CTR Match ILD/Q621 Saturated Current Transfer Ratio Current Transfer Ratio Collector-Emitter Saturation Voltage ILD/Q621GB Saturated Current Transfer Ratio Current Transfer Ratio (Collector-Emitter) Collector-Emitter Saturation Voltage Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output Low Common Mode Coupling Capacitance Package Capacitance Insulation Resistance Channel to Channel Insulation CMH CML CCM CI-O RS 0.8 1012 500 5000 5000 0.01 V/µs V/µs pF pF Ω VAC VIO=0 V, f=1 MHz VIO=500 V, TA=25°C VCM=50 VP-P, RL=1 kΩ, IF=0 mA VCM=50 VP-P, RL=1 kΩ, IF=10 mA CTRCEsat CTRCE VCEsat 30 100 200 600 0.4 % % V IF=1 mA, VCE=0.4 V IF=5 mA, VCE=5 V IF=8 mA, ICE=0.2 mA CTRCEsat CTRCE VCEsat 50 60 80 600 0.4 % % V IF=1 mA, VCE=0.4 V IF=5 mA, VCE=5 V IF=8 mA, ICE=2.4 mA CTRX/CTRY 1 to 1 3 to 1 IF=.


ILD621 ILD621GB ILD66


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