Document
VISHAY
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, With Base Connection
Single Channel
Features
• • • • AC or Polarity Insensitive Input Built-in Reverse Polarity Input Protection Improved CTR Symmetry Industry Standard DIP Package
A/C 1 C/A 2 NC 3 Dual Channel A A C
i179024
6 B 5 C 4 E
Agency Approvals
• UL File #E52744 System Code H or J • CSA 93751 • BSI IEC60950 IEC60965 • DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
1 3 4
8 E 7 C 6 C 5 E
C 2
Order Information
Part IL250 IL251 IL252 ILD250 ILD251 ILD252 IL250-X007 IL250-X009 IL251-X009 IL252-X007 IL252-X009 ILD250-X009 ILD251-X006 ILD251-X007 ILD251-X009 ILD252-X009 Remarks CTR > 50 %, Single Channel DIP-6 CTR > 20 %, Single Channel DIP-6 CTR > 100 %, Single Channel DIP-6 CTR > 50 %, Dual Channel DIP-8 CTR > 20 %, Dual Channel DIP-8 CTR > 100 %, Dual Channel DIP-8 CTR > 50 %, Single Channel SMD-6 (option 7) CTR > 50 %, Single Channel SMD-6 (option 9) CTR > 20 %, Single Channel SMD-6 (option 9) CTR > 100 %, Single Channel SMD-6 (option 7) CTR > 100 %, Single Channel SMD-6 (option 9) CTR > 50 %, Dual Channel SMD-6 (option 9) CTR > 20 %, Dual Channel DIP-8 400 mil (option 6) CTR > 20 %, Dual Channel SMD-6 (option 7) CTR > 20 %, Dual Channel SMD-6 (option 9) CTR > 100 %, Dual Channel SMD-6 (option 9)
Applications
Ideal for AC signal detection and monitoring.
Description
The IL250/ 251/ 252/ ILD250/ 251/ 252 are bidirectional input optically coupled isolators consisting of two Gallium Arsenide infrared LEDs coupled to a silicon NPN phototransistor per channel. The IL250/ ILD/250 has a minimum CTR of 50 %, the IL251/ ILD251 has a minimum CTR of 20 %, and the IL252/ ILD252 has a minimum CTR of 100 %. The IL250/ IL251/ IL252 are single channel optocouplers. The ILD250/ ILD251/ ILD252 has two isolated channels in a single DIP package.
For additional information on the available options refer to Option Information.
Document Number 83618 Rev. 1.3, 20-Apr-04
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IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Forward continuous current Power dissipation Derate linearly from 25 °C Test condition Symbol IF Pdiss Value 60 100 1.33 Unit mA mW mw/°C
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Power dissipation single channel Power dissipation dual channel Derate linearly from 25 °C single channel Derate linearly from 25 °C dual channel Test condition Symbol BVCEO BVEBO BVCBO Pdiss Pdiss Value 30 5.0 70 200 150 2.6 2.0 Unit V V V mW mW mW/°C mW/°C
Coupler
Parameter Isolation test voltage (between emitter and detector referred to standard climate 23 °C/50 %RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Total dissipation single channel Total dissipation dual channel Derate linearly from 25 °C single channel Derate linearly from 25 °C dual channel Storage temperature Operating temperature Lead soldering time at 260 °C Tstg Tamb RIO RIO Ptot Ptot Test condition Symbol VISO Value 5300 Unit VRMS
≥ 7.0 ≥ 7.0 10
12
mm mm Ω Ω mW mW mW/°C mW/°C °C °C sec.
1011 250 400 3.3 5.3 - 55 to + 150 - 55 to + 100 10
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Document Number 83618 Rev. 1.3, 20-Apr-04
VISHAY
Electrical Characteristics
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Test condition IF = ± 10 mA Symbol VF Min Typ. 1.2 Max 1.5 Unit V
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA IE = 100 µA IC = 10 µA VCE = 10 V Symbol BVCEO BVEBO BVCBO ICEO Min 30 7.0 70 Typ. 50 10 90 5.0 50 Max Unit V V V nA
Coupler
Parameter Collector-emitter saturation voltage Test condition IF = ± 16 mA, IC = 2.0 mA Symbol VCEsat Min Typ. Max 0.4 Unit V
Current Transfer Ratio
Parameter DC Current Transfer Ratio Test condition IF = ± 10 mA, VCE = 10 V Part ILD250 ILD251 ILD252 Symmetry (CTR @ + 10 mA)/ (CTR @ -10 mA) Symbol CTRDC CTRDC CTRDC Min 50 20 100 0.50 1.0 2.0 Typ. Max Unit % % %
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
IF - LED Forward Current - mA NCTR - N.