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6N139 Dataheets PDF



Part Number 6N139
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description IRED PHOTO
Datasheet 6N139 Datasheet6N139 Datasheet (PDF)

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N138, 6N139 6N138,6N139 Current Loop Driver Low Input Current Line Receiver CMOS Logic Interface The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaAℓAs Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. • Isolation voltage: 2500 Vrms (min) • Current transfer ratio : 6N138 − 300% (min) (IF=1.6mA) : 6N.

  6N139   6N139


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TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N138, 6N139 6N138,6N139 Current Loop Driver Low Input Current Line Receiver CMOS Logic Interface The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaAℓAs Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. • Isolation voltage: 2500 Vrms (min) • Current transfer ratio : 6N138 − 300% (min) (IF=1.6mA) : 6N139 − 400% (min) (IF=0.5mA) • Switching time: 6N138 − tPHL = 10μs (max) − tPLH = 35μs (max) 6N139 − tPHL = 1μs (max) − tPLH = 7μs (max) • UL recognized: UL1577, file no. E67349 Unit: mm Pin Configuration (top view) 1 : N.C. 1 8 2 : Anode 3 : Cathode 2 7 4 : N.C. 5 : Gnd 3 6 6 : O utput 7 : O utput Base 8 : VCC 45 TOSHIBA 11−10C4 Weight: 0.54 g (typ.) Schematic 2 + IF VF - 3 VCC 8 IC C IO 6 VO IB 7 VB 5 GND Start of commercial production 1988/02 1 2014-09-01 Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C) 6N138,6N139 Characteristic Symbol Rating Unit Detector LED Forward current Pulse forward current Total pulse forward current Reverse voltage Diode power dissipation Output current Emitter−base reverse voltage Supply voltage Output voltage Output power dissipation Operating temperature range Storage temperature range Lead solder temperature (10s) (*4) Isolation voltage (1minute, R.H.≤ 60%) (Note 1) (Note 2) (Note 3) (Note 4) IF IFP(*1) IFP(*2) VR PD IO VEB VCC(*3) VO(*3) PO Topr Tstg Tsol BVS(**) 20 40 1 5 35 60 0.5 −0.5 to 18 −0.5 to 18 100 0 to 70 −55 to 125 260 2500 3540 mA mA A V mW mA V V V mW °C °C °C Vrms Vdc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (*) JEDEC registered data (**) Not registered JEDEC (*1) 50% duty cycle, 1ms pulse width (*2) Pulse width 1μs, 300pps (*3) 6N138… −0.5 to 7V (*4) 1.6mm below seating plane 2 2014-09-01 6N138,6N139 Electrical Characteristics Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted) Characteristic Symbol Test Condition Min (*5)Typ. Max Unit Current transfer ratio (Note 5, 6) 6N139 6N138 CTR(*) IF=0.5mA, VO=0.4V VCC=4.5V IF=1.6mA, VO=0.4V VCC=4.5V Logic low output voltage (Note 6) Logic high output current (Note 6) Logic low supply current Logic high supply current 6N139 6N138 6N139 6N138 (Note 6) (Note 6) VOL IOH(*) ICCL ICCH IF=1.6mA, IO=6.4mA VCC=4.5V IF=5mA, IO=15mA VCC=4.5V IF=12mA, IO=24mA VCC=4.5V IF=1.6mA, IO=4.8mA VCC=4.5V IF=0mA, VO=VCC=18V IF=0mA, VO=VCC=7V IF=1.6mA, VO=Open VCC=5V IF=0mA, VO=Open, VCC=5V Input forward voltage Input reverse breakdown voltage Temperature coefficient of forward voltage Input capacitance Resistance (input−output) VF(*) IF=1.6mA, Ta=25°C BVR(*) IR=10μA, Ta=25°C ∆VF / ∆Ta IF=1.6mA CIN f=1MHz, VF=0 RI−O VI−O=500V R.H.≤ 60% (Note 7), Capacitance (input−output) CI−O f=1MHz (Note 7) (**) JEDEC registered data. (*5) All typical values are at Ta=25°C and VCC=5V, unless otherwise noted. 400 500 300 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5 ⎯ ⎯ ⎯ ⎯ 800 900 600 0.1 0.1 0.2 0.1 0.05 0.05 0.2 10 1.65 ⎯ −1.9 60 1012 0.6 ⎯ % ⎯ ⎯ 0.4 0.4 V 0.4 0.4 100 μA 250 ⎯ mA ⎯ nA 1.7 V ⎯V ⎯ mV / °C ⎯ pF ⎯Ω ⎯ pF 3 2014-09-01 6N138,6N139 Switching Specifications (Ta=25°C, VCC=5V, unless otherwise specified) Characteristic Symbol Propagation delay time to logic low at output (Note 6, 8) 6N139 6N138 tpHL(*) Propagation delay time to logic high at output (Note 6, 8) 6N139 6N138 Common mode transient immunity at logic high level output (Note 9) Common mode transient immunity at logic low level output (Note 9) tpLH(*) CMH CML Test Circuit 1 1 Test Condition IF=0.5mA, RL=4.7kΩ IF=12mA, RL=270Ω IF=1.6mA, RL=2.2kΩ IF=0.5mA, RL=4.7kΩ IF=12mA, RL=270Ω IF=1.6mA, RL=2.2kΩ 2 IF=0mA, RL=2.2kΩ VCM=400Vp−p IF=1.6mA 2 RL=2.2kΩ VCM=400Vp−p Min Typ. Max ⎯ 5 25 ⎯ 0.2 1 ⎯ 1 10 ⎯ 5 60 ⎯1 7 ⎯ 4 35 Unit μs μs ⎯ 500 ⎯ V / μs ⎯ −500 ⎯ V / μs (*)JEDEC registered data. (Note 1): Derate linearly above 50°C free−air temperature at a rate of 0.4mA / °C (Note 2): Derate linearly above 50°C free−air temperature at a rate of 0.7mW / °C (Note 3): Derate linearly above 25°C free−air temperature at a rate of 0.7mA / °C (Note 4): Derate linearly above 25°C free−air temperature at a rate of 2.0mW / °C (Note 5): (Note 6): DC CURRENT TRANSFER RATIO is defined as the ratio of output collector current, IO, to the forward LED input current, IF, t.


6N139 6N139 6R1TI30Y-080


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