50MT060ULS

I27123 rev. C 02/03 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor (NTC) Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation UL approved ( file E78996 ) VCES = 600V IC = 100A, TC = 25°C Benefits Optimized for Welding, UPS and SMPS Applications Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode Low EMI, requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters VCES IC ICM ILM IF IFM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation Diode IGBT @ T C = 25°C @ TC = 100°C @ T C = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 122°C Max 600 100 50 200 200 48 200 ± 20 2500 445 175 205 83 Units V A V W www.irf.com 1 50MT060ULS I27123 rev. C 02/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.69 1.96 1.88 3 600 - 13 22 29 0.25 6 1.64 1.82 1...