BA682

BA682, BA683 SILICON EPITAXIAL PLANAR DIODE SWITCHES In MiniMELF case especially suited for automatic insertion for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz .The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings (T a = 25oC) Reverse Voltage Forward Current at Tamb = 25oC Junction Temperature Storage Temperature Range Symbol VR IF Tj TS Value 35 100 150 -55 to +150 Unit V mA OC OC Characteristics at T j = 25oC Forward Voltage at IF = 100mA Leakage Current at VR = 20V Dynamic Forward Resistance at f = 50 to 1000 MHz, IF = 3mA at f = 50 to 1000 MHz, IF = 10mA Capacitance at VR = 1V, f = 1MHz at VR = 3V, f = 1MHz Series Inductance across Case BA682 BA683 BA682 BA683 BA682 BA683 Symbol Min. VF - IR - rf rf rf rf -...