BA316

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application Continuous reverse voltage: 10 V, 30 V, 50 V Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V Repetitive peak forward current: max. 225 mA. The diodes are type branded. handbook, halfpage k BA316; BA317; BA318 DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. a MAM246 APPLICATIONS High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BA316 BA317 BA318 VR continuous reverse voltage BA316 BA317 BA318 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 350 +200 200 A A A mW °C °C see Fig.2; note 1 − − − − − 10 30 50 100 225 V V V mA mA PARAMETER repetitive peak reverse voltage ...