Silicon Planar Diodes
BA282.BA283
Vishay Telefunken
Silicon Planar Diodes
Features
D Low differential forward resistance D Low diode capacita...
Description
BA282.BA283
Vishay Telefunken
Silicon Planar Diodes
Features
D Low differential forward resistance D Low diode capacitance D High reverse impedance
Applications
94 9367
Band switching in VHF–tuners
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W
Document Number 85526 Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600 1 (3)
BA282.BA283
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20 V f=100MHz, VR=1V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=10mA Reverse impedance f=100MHz, VR=1V Type Symbol VF IR CD CD CD rf rf rf rf zr Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF
Differential forward resistance
BA282 BA283 BA282 BA283 BA282 BA283
100
W W W W kW
Characteristics (Tj = 25_C unless otherwise specified)
rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 BA 283 1 3.0 2.5 2.0 1.5 1.0 BA 283 0.5 0 0.1
94 9072
f = 100 MHz Tj = 25°C
BA 282
BA 282 0.1 1 10 100
94 9073
0.1
1
10
100
IF – Forward Current ( mA )
VR – Reverse Voltage ( V )
Figure 1. Differential Forward Resistance vs. Forward Current
Fig...
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