FQP1N60

QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 9.3Ω (Typ.) 1 2 3 RDS(ON) = 11.5Ω ID = 1.2A TO-220 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds y x x z x Value 600 1.2 0.76 4.8 ±30 50 1.2 4.0 4.5 40 0.32 −55 to +150 °C 300 A V mJ A mJ V/ns W W/°C Units V A THERMAL RESISTANCE Symbol RθJC RθCS RθJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. − 0.5 − Max. 3.13 − 62.5 °C/W Units REV. B 1 © 1999 Fairchild Semiconductor Corporation FQP1N60 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain...