FQB44N08 / FQI44N08
August 2000
QFET
FQB44N08 / FQI44N08
80V N-Channel MOSFET
General Description
These N-Channel enha...
FQB44N08 / FQI44N08
August 2000
QFET
FQB44N08 / FQI44N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D
TM
Features
44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB44N08 / FQI44N08 80 44 31.1 176 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
450 44 12.7 6.5 3.75 127 0.85 -55 to +175 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) -...