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FQI1N60

Fairchild Semiconductor
Part Number FQI1N60
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB1N60 / FQI1N60 April 2000 QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General Description These N-Channel enhancem...
Datasheet PDF File FQI1N60 PDF File

FQI1N60
FQI1N60

Overview
FQB1N60 / FQI1N60 April 2000 QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 1.
2A, 600V, RDS(on) = 11.
5Ω @VGS = 10 V Low gate charge ( typical 5.
0 nC) Low Crss ( typical 3.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability ...


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