FQB13N50 / FQI13N50
March 2001
QFET
FQB13N50 / FQI13N50
500V N-Channel MOSFET
General Description
These N-Channel enha...
FQB13N50 / FQI13N50
March 2001
QFET
FQB13N50 / FQI13N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge. D
TM
Features
12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche tested. Improved dv/dt capability.
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G
S
G!
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB13N50 / FQI13N50 500 12.5 7.9 50 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
810 12.5 17 4.5 3.13 170 1.35 -55 to +150 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Stora...