Document
FQB11P06 / FQI11P06
May 2001
QFET
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
• • • • • • • -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D G! G
S
!
● ●
▶ ▲
●
S
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB11P06 / FQI11P06 -60 -11.4 -8.05 -45.6 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
160 -11.4 5.3 -7.0 3.13 53 0.35 -55 to +150 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.85 40 62.5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A4. May 2001
FQB11P06 / FQI11P06
Elerical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.07 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -5.7 A VDS = -30 V, ID = -5.7 A
(Note 4)
-3.0 ---
-0.14 5.1
-5.0 0.175 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---420 195 45 550 250 60 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25 Ω
(Note 4, 5)
--------
6.5 40 15 45 13 2.0 6.3
25 90 40 100 17 ---
ns ns ns ns nC nC nC
VDS = -48 V, ID = -11.4 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs
(Note 4)
------
---83 0.26
-11.4 -45.6 -4.0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.44mH, IAS = -11.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A4. May 2001
FQB11P06 / FQI11P06
Typical Characteristics
10
1
-I D , Drain Current [A]
-I D, Drain Current [A]
VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top :
10
1
175℃
10
0
10
0
25℃ -55℃
※ Notes : 1. VDS = -30V 2. 250μ s Pulse Test
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
RDS(on) [ Ω ], Drain-Source On-Resistance
VGS = - 10V 0.4 VGS = - 20V
-I DR , Reverse Drain Current [A]
0.6
10
1
10
0
0.2
※ Note : TJ = 25℃
175℃
-1
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0.0 0 10 20 30 40 50
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain C.