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FQI11P06 Dataheets PDF



Part Number FQI11P06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V P-Channel MOSFET
Datasheet FQI11P06 DatasheetFQI11P06 Datasheet (PDF)

FQB11P06 / FQI11P06 May 2001 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications suc.

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FQB11P06 / FQI11P06 May 2001 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB11P06 / FQI11P06 -60 -11.4 -8.05 -45.6 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 160 -11.4 5.3 -7.0 3.13 53 0.35 -55 to +150 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.85 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. A4. May 2001 FQB11P06 / FQI11P06 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.07 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -5.7 A VDS = -30 V, ID = -5.7 A (Note 4) -3.0 --- -0.14 5.1 -5.0 0.175 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---420 195 45 550 250 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25 Ω (Note 4, 5) -------- 6.5 40 15 45 13 2.0 6.3 25 90 40 100 17 --- ns ns ns ns nC nC nC VDS = -48 V, ID = -11.4 A, VGS = -10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs (Note 4) ------ ---83 0.26 -11.4 -45.6 -4.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.44mH, IAS = -11.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation Rev. A4. May 2001 FQB11P06 / FQI11P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain Current [A] VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : 10 1 175℃ 10 0 10 0 25℃ -55℃ ※ Notes : 1. VDS = -30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.8 RDS(on) [ Ω ], Drain-Source On-Resistance VGS = - 10V 0.4 VGS = - 20V -I DR , Reverse Drain Current [A] 0.6 10 1 10 0 0.2 ※ Note : TJ = 25℃ 175℃ -1 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.0 0 10 20 30 40 50 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -ID , Drain C.


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