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FQD2N80

Fairchild Semiconductor
Part Number FQD2N80
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD2N80 / FQU2N80 September 2000 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description These N-Channel enha...
Datasheet PDF File FQD2N80 PDF File

FQD2N80
FQD2N80


Overview
FQD2N80 / FQU2N80 September 2000 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 1.
8A, 800V, RDS(on) = 6.
3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit...



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