Document
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant
N-Channel QFET® MOSFET
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G S G D
D
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●
S
◀
G!
▲
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D-PAK
I-PAK
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S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Parameter
FQD2N60C / FQU2N60C
600 1.9 1.14 7.6 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Unit
V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C
120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC RθJA RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient, Max.
FQD2N60C / FQU2N60C
2.87 50 110
Unit
°C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Package Marking and Ordering Information
Device Marking
FQD2N60C FDU2N60C
Device
FQD2N60C FDU2N60C
Package
D-PAK I-PAK
TC = 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 0.95 A VDS = 40 V, ID = 0.95 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
600 -----2.0 ------
Typ
-0.6 -----3.6 5.0 180 20 4.3 9 25 24 28 8.5 1.3 4.1 ---230 1.0
Max
--1 10 100 -100 4.0 4.7 -235 25 5.6 28 60 58 66 12 --1.9 7.6 1.4 ---
Unit
V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns µC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 300 V, ID = 2 A, RG = 25 Ω ---(Note 4, 5)
----
VDS = 480 V, ID = 2 A, VGS = 10 V
(Note 4, 5)
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.9 A VGS = 0 V, IS = 2 A, dIF / dt = 100 A/µs
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
10
1
ID, Drain Current [A]
10
ID, Drain Current [A]
0
150 C
10
0
o
-55 C 25 C
o
o
10
-1
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
12
RDS(ON) [Ω ],.