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FQD2N60C Dataheets PDF



Part Number FQD2N60C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V N-Channel MOSFET
Datasheet FQD2N60C DatasheetFQD2N60C Datasheet (PDF)

FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailore.

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FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G S G D D ! ● S ◀ G! ▲ ● ● D-PAK I-PAK ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQD2N60C / FQU2N60C 600 1.9 1.14 7.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C 120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient, Max. FQD2N60C / FQU2N60C 2.87 50 110 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Package Marking and Ordering Information Device Marking FQD2N60C FDU2N60C Device FQD2N60C FDU2N60C Package D-PAK I-PAK TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 0.95 A VDS = 40 V, ID = 0.95 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 600 -----2.0 ------ Typ -0.6 -----3.6 5.0 180 20 4.3 9 25 24 28 8.5 1.3 4.1 ---230 1.0 Max --1 10 100 -100 4.0 4.7 -235 25 5.6 28 60 58 66 12 --1.9 7.6 1.4 --- Unit V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns µC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 300 V, ID = 2 A, RG = 25 Ω ---(Note 4, 5) ---- VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4, 5) ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.9 A VGS = 0 V, IS = 2 A, dIF / dt = 100 A/µs (Note 4) -- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 2 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] 10 ID, Drain Current [A] 0 150 C 10 0 o -55 C 25 C o o 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 12 RDS(ON) [Ω ],.


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