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M28F512

512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory

Description

M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES 32 1 PDIP32 (B) PLCC32 (C) D...

STMicroelectronics

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M28F512 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory - STMicroelectronics

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