GaAs FET HYBRID IC
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz b...
Description
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio.
0.6 2 3.5 14.7 14.2 2 3.5 2
Unit:mm
FEATURES
Low voltage High gain High efficiency High power 3.0V 24dB(typ.) 50% 34.5dBm
6
APPLICATION
GSM IV
1
2
3
4
5
2.25
2.5
2.5
2.5
2.5 1.95
0.25±0.1
1 2 3
0.5±0.15
4 5 6
RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN)
ABSOLUTE MAXIMUM RATINGS
Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature. Storage temperature. Condition PO≤34.5dBm ZG=ZL=50Ω Ta 25˚C 25˚C – – Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C
Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation.
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol f PO ht Igt rin 2fo,3fo OSC.T VSWR.T Parameter Frequency Output power Total efficiency Total gate current Return loss 2nd harmonics, 3rd harmonics Stability Load VSWR tolerance Test conditions Limits Min Typ Max – 890 915 – 34.5 – 50 – – -3 – 0 – – -6 – – -30 – – -60 No degradation or destroy Unit MHz dBm % mA dB dBc dBc –
Note1 Note2 Note3 Note4 Note5
Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50Ω Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ρL=3:1(all phase),ZG=50Ω ...
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