DatasheetsPDF.com

F5E1

Fairchild Semiconductor

AlGaAs INFRARED EMITTING DIODE

F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880...


Fairchild Semiconductor

F5E1

File Download Download F5E1 Datasheet


Description
F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46 package. 0.030 (0.76) NOM 0.155 (3.94) MAX FEATURES Good optical to mechanical alignment Mechanically and wavelength matched 1.00 (25.4) MIN SCHEMATIC ANODE (Connected To Case) CATHODE 3 ANODE (CASE) to the TO-18 series phototransistor Hermetically sealed package 0.100 (2.54) 0.050 (1.27) High irradiance level 1 0.040 (1.02) 0.040 (1.02) 45° 1 3 Ø0.020 (0.51) 2X NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10µs; 100Hz) Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless ot...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)