polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
polyfet rf devices
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature
F1020
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 130 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
-65 o C to 150o C
20 A
RF CHARACTERISTICS ( 130 WATTS OUTPUT )
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 60 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = Idq = Idq = 2 A, Vds = 28.0 V, F = 400 MHz 2 A, Vds = 28.0 V, F = 400 MHz 2 A, Vds = 28.0 V, F = 400 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Sour...
