DatasheetsPDF.com

FFM104-M Dataheets PDF



Part Number FFM104-M
Manufacturers Formosa MS
Logo Formosa MS
Description Fast recovery type
Datasheet FFM104-M DatasheetFFM104-M Datasheet (PDF)

Chip Silicon Rectifier FFM101-M THRU FFM107-M Fast recovery type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) Mechanical data Case : Molded plastic, JEDEC SOD123 / MINI SM.

  FFM104-M   FFM104-M



Document
Chip Silicon Rectifier FFM101-M THRU FFM107-M Fast recovery type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) Mechanical data Case : Molded plastic, JEDEC SOD123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 55 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 100 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 42 15 C / w pF +150 o C SYMBOLS MARKING CODE F1 F2 F3 F4 F5 F6 F7 V RRM (V) *1 V RMS (V) 35 70 140 280 420 560 700 *2 VR *3 VF *4 T RR *5 Operating temperature ( o C) (V) 50 100 200 400 600 800 1000 (V) (nS) FFM101-M FFM102-M FFM103-M FFM104-M FFM105-M FFM106-M FFM107-M 50 100 200 400 600 800 1000 150 *1 Repetitive peak reverse voltage 1.3 250 500 -55 to +150 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (FFM101-M THRU FFM107-M) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 50 INSTANTANEOUS FORWARD CURRENT,(A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWAARD SURGE CURRENT,(A) 50 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLT AGE,(V) 40 FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 30 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 20 10 (+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. ( ) PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 35 30 25 20 15 10 5 trr +0.5A | | | | | | | | 0 -0.25A JUNCTION CAPACITANCE,(pF) -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) .


FFM104 FFM104-M FFM105


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)