FDZ7064N

FDZ7064N January 2003 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V RDS(ON) = 7.0 mΩ @ VGS = 10 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability. Applications DC/DC converters Solenoid drive Pin 1 D D D D D D S S S G D S S S S D S S S S D S S S S D D D D D D F7064 G Pin 1 S Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±12 13.5 60 2.2 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resi...