FDZ2553N

FDZ2553N February 2003 FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB. Outstanding thermal transfer characteristics: significantly better than SO-8. Ultra-low Qg x RDS(ON) figure-of-merit High power and current handling capability Applications Battery management Load switch Battery protection D D S S S D S S S Pin 1 S G Q1 S G S G Q2 Q1 D Q2 S D S D Pin 1 D G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter 20 ±12 9.6 20 2.1 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Jun...