FDZ2551N

FDZ2551N November 1999 ADVANCE INFORMATION FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features = 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. = Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. = Ultra-thin package: less than 0.70 mm height when mounted to PCB. = Outstanding thermal transfer characteristics: significantly better than SO-8. = Ultra-low Qg x RDS(ON) figure-of-merit. = High power and current handling capability. Applications = Battery management = Load switch = Battery protection D D S S S D S Pin 1 S G S G S G Q2 S S Q1 D F2551 Q1 S D S D Q2 G Pin 1 D Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 20 ±12 9 20 3 -55 to +175 Units V V A W °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambien...