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FDZ208P

Fairchild Semiconductor
Part Number FDZ208P
Manufacturer Fairchild Semiconductor
Description P-Channel 30 Volt PowerTrench
Published Mar 30, 2005
Detailed Description FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ ...
Datasheet PDF File FDZ208P PDF File

FDZ208P
FDZ208P

Overview
FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features • –12.
5 A, –30 V.
RDS(ON) = 10.
5 mΩ @ VGS = –10 V RDS(ON) = 16.
5 mΩ @ VGS = –4.
5 V • Occupies only 14 mm2 of PCB area.
Only 42% of the area of SO-8 • Ultra-thin package: less than 0.
80 mm height when mounted to PCB • 3.
5 x 4 mm2 footprint • High power and current handling capability General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs.
Abs.
Max Gate Rating for the ultimate low Rds Battery Protection MOSFET.
This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high ...


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