FDZ203N

FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 Ultra-thin package: less than 0.80 mm height when mounted to PCB Ultra-low Qg x RDS(ON) figure-of-merit. High power and current handling capability. Applications Battery management Load switch Battery protection D D S S D P in 1 S F203N F203N S G S S G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter 20 ±12 7.5 20 1.6 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 67 11 1 °C/W °C/W °C/W Package Ma...