P-Channel 2.5V Specified PowerTrench MOSFET
FDW264P
November 2003
FDW264P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V spe...
Description
FDW264P
November 2003
FDW264P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
–9.7 A, –20 V. RDS(ON) = 10.0 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
Applications
Load switch Motor drive DC/DC conversion Power management
D S S D G S S D
Pin 1
5 6 7 8
4 3 2 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ± 12
(Note 1)
Units
V V A W °C
–9.7 –50 1.3 0.6 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
96 208
°C/W
Package Marking and Ordering Information
Device Marking 264P Device FDW264P Reel Size 13’’ Tape width 16mm Quantity 3000 units
2003 Fairchild Semiconductor Corporation
FDW264P Rev. C (W)
FDW264P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) ...
Similar Datasheet