Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2515NZ
February 2003
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
This N...
Description
FDW2515NZ
February 2003
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V
Extended VGSS range (±12V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package
Applications
Li-Ion Battery Pack
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
5.8 20 1.6 1.1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
77 114
°C/W °C/W
Package Marking and Ordering Information
Device Marking 2515NZ Device FDW2515NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units
2003 Fairchild Semiconductor Corporation
FDW2515NZ Rev C
FDW2515NZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless o...
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