FDW2508P

FDW2508P December 2001 FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Power management Load switch Battery protection G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1) Units V V A W °C –6 –30 1.3 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 100 125 °C/W Package Marking and Ordering Information Device Marking 2508P Device FDW2508P Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDW2508P Rev. E (W) FDW2508P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Tem...