FDW2506P

FDW2506P October 2000 FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V. RDS(ON) = 0.033 Ω @ VGS = –2.5V. Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Load switch Motor drive DC/DC conversion Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1) Units V V A W °C –5.3 –30 1.0 0.6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2506P 2000 Fairchild Semiconductor Corporation Device FDW2506P Reel Size 13’’ Tape width 12mm Quantity 2500 units FDW2506P Rev. C (W) FDW2506P Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR TA = 25°C unless ot...