FDS9945

FDS9945 February 2001 FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.5 A, 60 V. RDS(ON) = 0.100Ω @ V GS = 10 V RDS(ON) = 0.200Ω @ V GS = 4.5V Optimized for use in switching DC/DC converters with PWM controllers Very fast switching Low gate charge. D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G1 S1 G G2 S S2 S 8 1 S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 60 ±20 (Note 1a) Units V V A W 3.5 10 2 1.6 1.0 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 78 (steady state), 50 (10 sec) 135 40 °C/W °C/W °C/W Package Marking and Ordering Information Device...