FDS9431A

FDS9431A September 1999 FDS9431A P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Power management Load switch Battery protection D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25oC unless otherwise noted Parameter Ratings -20 ±8 (Note 1a) Units V V A W -3.5 -18 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS9431A 1999 Fairchild Semiconductor Corporation Device FDS9431A Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS9431A Rev. A2 FDS9431A Electrical Characteristics Symbol BVDSS DBVDSS D TJ IDSS IGSSF IGSS...