FDS9400A

FDS9400A December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features –3.4 A, –30 V RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V Low gate charge (2.4nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications Power management Load switch Battery protection D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –30 ±25 (Note 1a) Units V V A W –3.4 –10 2.5 1.2 1 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS9400A 2001 Fairchild Semiconductor Corporation Device FDS9400A Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS9400A Rev B1(W) ...