30V N & P-Channel PowerTrench MOSFETs
FDS8333C
August 2002
FDS8333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs a...
Description
FDS8333C
August 2002
FDS8333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V –3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS = –10 V RDS(ON) = 200 mΩ @ V GS = –4.5 V
Q2
Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.
Q2
D1 D
D1 D
DD2 D2 D
5 6
Q1
4 3 2 1
SO-8
Pin 1 SO-8
G2 S2 G G1 S S1 S
7 8
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
TA=25oC unless otherwise noted
Parameter
Q1
30 ±16
(Note 1a)
Q2
–30 ±20 –3.4 –20 2 1.6 1 0.9 –55 to +150
Units
V A
4.1 20
– Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W
Package Marking and Ordering Information
Device Mar...
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