FDS7764A

FDS7764A August 2000 PRELIMINARY FDS7764A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 15 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications Synchronous Rectifier DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 15 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 50 (10 sec) 30 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS7764A Device FDS7764A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS7764A Rev B1(W) FDS7764A Electrical Characteristics Symbol...