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FDS7066SN3

Fairchild Semiconductor

30V N-Channel PowerTrench SyncFET

FDS7066SN3 January 2004 FDS7066SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7066SN3 is designed ...


Fairchild Semiconductor

FDS7066SN3

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Description
FDS7066SN3 January 2004 FDS7066SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066SN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7066SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. Features 19 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications DC/DC converter Motor drivesFeatures 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W °C 19 60 3.0 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W °C/W Pac...




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