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FDS6990A Dataheets PDF



Part Number FDS6990A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N-Channel MOSFET
Datasheet FDS6990A DatasheetFDS6990A Datasheet (PDF)

FDS6990A June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 7.5 A, 30 V. RDS(ON.

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FDS6990A June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 7.5 A, 30 V. RDS(ON) = 18 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6990A FDS6990A 13’’ Ratings 30 ± 20 7.5 20 1.6 1.0 0.9 –55 to +150 78 40 Tape width 12mm Units V V A W °C °C/W °C/W Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6990A Rev D(W) FDS6990A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Source Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VGS = ±20 V, VDS = 0 V 30 V 26 mV/°C 1 10 ±100 µA nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA 1 1.9 3 V ID = 250 µA, Referenced to 25°C –4 mV/°C VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 7.5 A,TJ = 125°C 11 18 mΩ 13 23 15 31 VGS = 10 V, VDS = 5 V 20 A VDS = 5 V, ID = 7.5 A 33 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 1235 295 120 2.3 pF pF pF Ω Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 15 V, ID = 7.5 A, VGS = 5 V 10 19 5 10 28 44 10 19 12 17 3.5 4.2 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) trr Diode Reverse Recovery Time IF = 7.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge 1.3 0.7 1.2 24 13 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum mounting pad. FDS6990A Rev D(W) FDS6990A Typical Characteristics ID, DRAIN CURRENT (A) 20 VGS = 10.0V 3.5V 16 4.5V 4.0V 12 8 3.0V 4 0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 VGS = 3.5V 1.6 1.4 4.0V 1.2 4.5V 5.0V 6.0V 1 10.0V 0.8 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 ID = 7.5A VGS = 10.0V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. RDS(ON), ON-RESISTANCE (OHM) 0.05 0.04 ID = 3.75A 0.03 0.02 0.01 TA = 25oC TA = 125oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. ID, DRAIN CURRENT (A) 20 VDS = 5V 16 12 TA = 125oC 8 25oC -55oC 4 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 1 0.1.


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