FDS6694

FDS6694 December 2001 FDS6694 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 12 A, 30 V. RDS(ON) = 11 mΩ @ V GS = 10 V RDS(ON) = 13.5 mΩ @ V GS = 4.5 V Low gate charge (13 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications DC/DC converter Power management Load switch D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±16 (Note 1a) Units V V A W 12 50 2.5 1.4 1.2 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS6694 Device FDS6694 Reel Size 13’’ Tape width 12mm Quantity 2500 units © 2001 Fairchild Semiconductor Corporation FDS669...