30V N-Channel MOSFET
FDS6682
February 2004
FDS6682
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been de...
Description
FDS6682
February 2004
FDS6682
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Features
14 A, 30 V.
RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
Low gate charge (22 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
D D D D
SO-8
G SS S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6682
FDS6682
13’’
5 6 7 8
Ratings
30 ±20 14 50 2.5 1.2 1.0 –55 to +150
50 25
Tape width 12mm
4 3 2 1
Units
V V A W
°C
°C/W °C/W
Quantity 2500 units
©2004 Fairchild Semiconductor Corporation
FDS6682 Rev D(W)
FDS6682
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise ...
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