FDS6670A

FDS6670A June 2003 FDS6670A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 13 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6670A FDS6670A 13’’ Ratings 30 ±20 13 50 2.5 1.0 –55 to +150 50 125 25 Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2003 Fair...