N-Channel MOSFET
FDS6614A
January 2000
FDS6614A
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Leve...
Description
FDS6614A
January 2000
FDS6614A
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability.
Applications
DC/DC converter Load switch Motor drives
D D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ± 20
(Note 1a)
Units
V V A W
9.3 40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6614A
ã1999 Fairchild Semiconductor Corporation
Device FDS6614A
Reel Size 13’’
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