P-Channel Logic Level PowerTrench MOSFET
FDS6609A
April 2000 PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel ...
Description
FDS6609A
April 2000 PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
–6.3 A, –30 V . RDS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.5 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
Applications
DC/DC converter Load switch Motor Drive
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA =25oC unless otherwise noted
Parameter
Ratings
–30 ±20
(Note 1a)
Units
V V A W
-6.3 -40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6609A Device FDS6609A Reel Size 13’’ Tape width 12mm Quantity 2500 units
© 2000 Fairc...
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