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FDS6294 Dataheets PDF



Part Number FDS6294
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS6294 DatasheetFDS6294 Datasheet (PDF)

FDS6294 February 2007 FDS6294 tm 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 13 A, 30 V. RDS(ON) = 11.3 mΩ @ VGS = 10 V RDS(ON) = 14.4 m.

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FDS6294 February 2007 FDS6294 tm 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 13 A, 30 V. RDS(ON) = 11.3 mΩ @ VGS = 10 V RDS(ON) = 14.4 mΩ @ VGS = 4.5 V • Low gate charge (10 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. • RoHS Compliant DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) EAS Single Pulse Avalanche Energy (Note 3) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6294 FDS6294 13’’ Ratings 30 ± 20 13 50 3.0 1.2 181 –55 to +175 50 125 25 Tape width 12mm Units V V A W mJ °C °C/W Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS6294 Rev D1 (W) FDS6294 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125°C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 13 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 5 V ID = 13 A, Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) trr Diode Reverse Recovery Time IF = 13 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge 30 V 27 mV/°C 1 µA ±100 nA 1 1.8 3 V –5 mV/°C 9.4 11.3 mΩ 11.5 14.4 13.5 16.5 50 A 48 S 1205 pF 323 pF 102 pF 0.9 Ω 9 18 ns 4 8 ns 24 48 ns 6 12 ns 10 14 nC 3.5 nC 3 nC 2.1 A 0.74 1.2 V 25 nS 14 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper 2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 11A,VDD = 30V, VGS = 10V b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper FDS6294 Rev D1 (W) FDS6294 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Typical Characteristics ID, DRAIN CURRENT (A) 60 VGS = 10V 6.0V 50 4.0V 4.5V 3.5.V 40 30 20 3.0V 10 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.8 ID = 13A 1.6 VGS = 10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 70 VDS = 5V 60 50 TA = -55oC 25oC 125o C 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 VGS = 3.5V 1.8 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 1 0.8 0 10 20 30 40 ID, DRAIN CURRENT (A) 10V 50 60 RDS(ON), ON-RESISTANCE (OHM) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.028 0.024 0.02 0.016 0.012 0.008 0.004 2 ID = 13A TA = 125oC TA = 25oC 4 6 8 10 V.


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