FDS6162N3

FDS6162N3 May 2003 FDS6162N3 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 21 A, 20 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V RDS(ON) = 6.0 mΩ @ VGS = 2.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 (Note 1a) Units V V A W °C 21 60 3.0 –55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS6162N3 2002 Fairchild Semiconductor Corporation Device FDS6162N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS6162N3 Rev B2 (W) FDS6162N3 Electrical Characteristics Symbol Parameter D...