Document
FDS5690
March 2000
FDS5690
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features •
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
• • • •
Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications • •
DC/DC converter Motor drives
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
60
(Note 1a)
Units
V V A W
±20 7 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
FDS5690
Device
FDS5690
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C
FDS5690
DMOS Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
60
Typ
Max Units
V
Off Characteristics
57 1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ=125°C VGS = 6 V, ID = 6.5 A VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 7 A
2
2.5 -5.9 0.022 0.037 0.025
4
V mV/°C
0.028 0.050 0.033
Ω
ID(on) gFS
25 24
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 30 V, VGS = 0 V, f = 1.0 MHz
1107 149 72
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω
10 9 24 10
18 18 39 18 32
ns ns ns ns nC nC nC
VDS = 30 V, ID = 7 A, VGS = 10 V,
23 4 6.8
.