FDS4488

FDS4488 December 2001 FDS4488 30V N-Channel PowerTrench® MOSFET General Description This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. Features 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V Low gate charge (9.5 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter Load switch Motor drives D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±25 (Note 1a) Units V V A W 7.9 40 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS4488 Device FDS4488 Reel Size 13’’ Tape width 12mm Quantity 2500 units © 2001 Fairchild Semiconductor Corporation ...