N-Channel MOSFET
FDS4072N3
May 2003
FDS4072N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been desi...
Description
FDS4072N3
May 2003
FDS4072N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V RDS(ON) = 10 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
Synchronous rectifier DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
40 ± 12
(Note 1a)
Units
V V A W °C
12.4 60 3.0 1.5 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS4072N3 Device FDS4072N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS4072N3 Rev B1 (W)
FDS4072N3
Electrical Characteristics
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