FDS3992

FDS3992 April 2013 FDS3992 Dual N-Channel PowerTrench® MOSFET 100V, 4.5A, 62mΩ Features rDS(ON) = 54mΩ (Typ.), VGS = 10V, ID = 4.5A Qg(tot) = 11nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Formerly developmental type 82745 Electronic Valve Train Systems Branding Dash (1) (8) (2) (7) 5 1 2 3 4 SO-8 (3) (6) (4) (5) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Total Package Power Dissipation Derate above 25oC Operating and Storage Temperature Ratings 100 ±20 4.5 2.8 Figure 4 167 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC oC Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) Thermal Resistance, Junction to Case (Note 2) 50 oC/W 85 oC/W 25 oC/W Package Marking and Ordering Information Device Marking FDS3992 Device FDS...