FDS3680

FDS3680 January 2000 PRELIMINARY FDS3680 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 5.2 A, 100 V. RDS(ON) = 0.043 Ω @ VGS = 10 V RDS(ON) = 0.048 Ω @ VGS = 6 V. Low gate charge. Fast switching speed High performance trench technology for extremely low RDS(ON) . High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (Note 1a) Units V V A W 5.2 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3680 Device FDS3680 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS3680...