FDS3590

FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS3590 FDS3590 13’’  2000 Fairchild Semiconductor Corporation 5 6 7 8 Ratings 80 ±20 6.5 50 2.5 1.2 1.0 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W Qu...