Document
FDS2570
June 2000 PRELIMINARY
FDS2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
• 4A, 150 V. RDS(ON) = 0.072 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 6 V
• Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
150 ±20
(Note 1a)
Units
V V A W
4 30 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS2570 Device FDS2570 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
FDS2570 Rev B(W)
FDS2570
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = –20 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
150
Typ
Max Units
V
Off Characteristics
150 1 100 –100 mV/°C µA NA NA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 4 A ID = 3.8 A VGS = 6 V, VGS = 10 V, ID = 4 A, TJ = 125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 4 A
2
2.6 -7 60 63 120
4
V mV/°C
72 80 158
mΩ A
ID(on) gFS
30 20
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 75 V, f = 1.0 MHz
V GS = 0 V,
1907 117 33
PF PF PF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 75 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
12 7 41 21
19 14 65 34 62
Ns Ns Ns Ns NC NC NC
VDS = 75 V, VGS = 10 V
ID = 4 A,
39 7 9
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1
(Note 2)
A V
0.7
1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2570 Rev B(W)
FDS2570
Typical Characteristics
30 VGS = 10V 25 20 5.0V
1.6 VGS = 4.0V 4.5V 1.4
4.5V 15 4.0V 10 1 5 3.5V 0 0 1 2 3 4 5 0.8 0 5 10 15 20 25 30 1.2 5.0V 10V
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.2
2.6 2.2 1.8 ID = 4.3 A VGS = 10 V
ID = 2.2 A 0.16 TA = 125 C
o
1.4 1 0.6 0.2 -50 -25 0 25 50 75 100
o
0.12
0.08
TA = 25 C
o
125
150
0.04 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
15 VDS = 10 V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125 C 0.1
o
10 TA = 125 C 25 C 5 -55 C
o o o
25 C 0.01 -55 C 0.001
o
o
0 2 2.5 3 3.5 4 4.5
0.0001 0 0.2 0.4 0.6 0.8 1
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS2570 Rev B(W)
FDS2570
Typical Characteristics
10 ID = 4.3 A 8 75 6 VDS = 25 V 50 V
3000 2500 CISS 2000 1500 f = 1MHz VGS = 0 V
4 1000 CRSS 2 500 COSS 0 0 10 20 Qg, GATE CHARGE .