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FDS2570 Dataheets PDF



Part Number FDS2570
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS2570 DatasheetFDS2570 Datasheet (PDF)

FDS2570 June 2000 PRELIMINARY FDS2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply.

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FDS2570 June 2000 PRELIMINARY FDS2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4A, 150 V. RDS(ON) = 0.072 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 150 ±20 (Note 1a) Units V V A W 4 30 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS2570 Device FDS2570 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS2570 Rev B(W) FDS2570 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = –20 V VGS = 0 V VDS = 0 V VDS = 0 V Min 150 Typ Max Units V Off Characteristics 150 1 100 –100 mV/°C µA NA NA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 4 A ID = 3.8 A VGS = 6 V, VGS = 10 V, ID = 4 A, TJ = 125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 4 A 2 2.6 -7 60 63 120 4 V mV/°C 72 80 158 mΩ A ID(on) gFS 30 20 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 75 V, f = 1.0 MHz V GS = 0 V, 1907 117 33 PF PF PF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 75 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 7 41 21 19 14 65 34 62 Ns Ns Ns Ns NC NC NC VDS = 75 V, VGS = 10 V ID = 4 A, 39 7 9 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1 (Note 2) A V 0.7 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS2570 Rev B(W) FDS2570 Typical Characteristics 30 VGS = 10V 25 20 5.0V 1.6 VGS = 4.0V 4.5V 1.4 4.5V 15 4.0V 10 1 5 3.5V 0 0 1 2 3 4 5 0.8 0 5 10 15 20 25 30 1.2 5.0V 10V VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 2.6 2.2 1.8 ID = 4.3 A VGS = 10 V ID = 2.2 A 0.16 TA = 125 C o 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o 0.12 0.08 TA = 25 C o 125 150 0.04 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 15 VDS = 10 V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125 C 0.1 o 10 TA = 125 C 25 C 5 -55 C o o o 25 C 0.01 -55 C 0.001 o o 0 2 2.5 3 3.5 4 4.5 0.0001 0 0.2 0.4 0.6 0.8 1 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS2570 Rev B(W) FDS2570 Typical Characteristics 10 ID = 4.3 A 8 75 6 VDS = 25 V 50 V 3000 2500 CISS 2000 1500 f = 1MHz VGS = 0 V 4 1000 CRSS 2 500 COSS 0 0 10 20 Qg, GATE CHARGE .


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