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FDR838P

Fairchild Semiconductor
Part Number FDR838P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V spec...
Datasheet PDF File FDR838P PDF File

FDR838P
FDR838P

Overview
FDR838P March 1999 FDR838P P-Channel 2.
5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • • • • -8 A, -20 V.
RDS(ON) = 0.
017 Ω @ VGS = -4.
5 V RDS(ON) = 0.
024 Ω @ VGS = -2.
5 V Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
Applicat...


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